Бесплатные инструкции на русском языке
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Просмотр инструкции сотового cdma Samsung SCH-A302, страница 24

Samsung
4544
PPhhoonnee BBooookk
Entering a Name
Use the keys labeled with letters (alphanumeric keys) to
write the name.
Press once for the first labeled letter, twice for the
second and three times for the third etc.
The cursor moves to the right when you press a different
key. When entering the same letter twice (or a different
letter on the same key) just wait for a few seconds for
the cursor to move right automatically, and then select
the next letter.
• You can change the input mode by pressing the
volume keys on the left side of the phone. The
English, Hebrew and Number mode are toggled
each time you press the keys.
Note: To enter the number in the English or Hebrew
mode, you can press and hold down the
appropriate key.
• To move the cursor through the text, use the
navigation keys.
• To insert a space between words, press or
twice.
• If you make a mistake, you can remove characters to
the left of the cursor by pressing as many times
as necessary. Pressing and holding clears the
screen.
• You can enter special letters, such as punctuation or
symbols by pressing repeatedly.
. / : @ ( ) , ? ! $ % ^ & _ + - = { } [ ] < > | ; “ \ ‘ ~ `
PPhhoonnee BBooookk
Find Entry Menu 2-3
This option allows you to find an entry by location
number. When you access this option, you can see the
stored names in the Phone Book in numeric order.
1. Enter the location by pressing the number keys or
press or to scroll to the desired location,
2. Press to display the selected entry.
When the desired entry displays, press to place a
call.
If you press , you can access Options. For details on
Options, refer to Options under the Find Name menu
on page 41.
Note: You can locate Phone Book entries quickly when
the phone is in Standby mode. Press to
access Find Entry menu in one step and then
press or to scan entries.
Memory Status Menu 2-4
Using this option, you can check the status of the
phonebook memory. The display shows the number of
the occupied memory location, and the number of the
free memory location.
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